By S. Mononobe (auth.), Professor Dr. Motoichi Ohtsu (eds.)
This distinctive monograph sequence "Progress in Nano-Electro Optics" stories the result of complex stories of electro-optics at the nanometric scale. This 3rd quantity covers the newest issues of theoretical and experimental curiosity together with classical and quantum optics, natural and inorganic fabric technological know-how and expertise, floor technological know-how, spectroscopy, atom manipulation, photonics, and electronics. every one bankruptcy is written via a number of prime scientists from the suitable box. therefore, top of the range medical and technical details is supplied to scientists, engineers, and scholars engaged in nano-electro optics and nanophotonics learn. the 1st volumes addressed the "Basics and conception of close to box Optics" (2002) and "Novel units and Atom Manipulation" (2003).
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Extra resources for Progress in Nano-Electro-Optics III: Industrial Applications and Dynamics of the Nano-Optical System
After the etching, the tripletapered probe was coated with a 200-nm thick aluminum ﬁlm by a vacuum evaporation method. 40 S. Mononobe Table 6. 2 UV Near-Field Photoluminescence Images of Polysilane To demonstrate the UV triple-tapered probe, we performed UV near-ﬁeld photoluminescence imaging of polysilanes, which can be regarded as quantum wires based on silicon, and are expected to be applied to UV-light emitting devices. By changing the conformation of the silicon backbones, the optical properties can be controlled.
The sample–probe distance was controlled by the shear-force feedback technique to scan the sample. The sample is fabricated by growing a silicon-doped GaAs layer on a semi-insulating GaAs (111)A substrate with (311)A slopes . The thickness of the silicon-doped layer is around 1 µm. Figures 31a and b show the shear-force topographic image and near-ﬁeld photoluminescence image, which were simultaneously obtained. Because photoexcited electrons and holes are separated and drifted by the internal electric ﬁeld in the upper and lower junctions, the emission intensity is lower than those of the other regions as seen in Fig.
Pure silica core probes with (a) the conical core protruded from the ﬂat clad end (b) tapered clad and core, and (c) triple-taper structure as schematically shown in Fig. 34a–c, respectively. The single-tapered ﬁber is fabricated by immersing a 1300-nm pure silica ﬁber (PSF) (Sumitomo, PS1) with a core diameter of 10 µm in a BHF as described in Sect. 3. Figure 35 shows a scanning electron micrograph of the single-tapered ﬁber with the pure silica core and a cone angle of 120◦ . We have tried to develop UV single-mode ﬁbers with a cutoﬀ wavelength of less than 400 nm in order to fabricate UV single-tapered ﬁber.